| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2014-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101842814-B1 |
| titleOfInvention |
Devices, systems and methods for manufacturing through-substrate vias and front-side structures |
| abstract |
Method of manufacturing a semiconductor device and a semiconductor device having a substrate-penetrating electrode (TSV). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through at least a portion of a dielectric structure and a semiconductor substrate and forming a second portion on the outer surface of the lateral outer dielectric structure of the opening, Lt; RTI ID = 0.0 > a < / RTI > dielectric liner material. The method further includes removing the conductive material to expose a second portion of the dielectric liner material and forming an inlaid conductive line in a second portion of the dielectric liner material that is electrically coupled to the TSV. |
| priorityDate |
2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |