http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101842182-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101842182-B1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A thin film transistor having a thin film transistor having excellent electrical characteristics without causing an increase in the number of processes when a gate electrode is formed above and below the channel forming region of the thin film transistor through the gate insulating film in order to control the threshold voltage of the thin film transistor One of the tasks is to obtain a semiconductor device. The gate electrode provided above the oxide semiconductor layer is formed simultaneously with the patterning of the oxide semiconductor layer to reduce an increase in the number of processes required for manufacturing the second gate electrode. |
| priorityDate | 2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.