http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101829798-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101829798-B1 |
| titleOfInvention | Light emitting device |
| abstract | Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system. A light emitting device according to an embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A first electrode and a second electrode for supplying power to the light emitting structure; And a trench separating into a first region and a second region in the light emitting structure, wherein the first electrode is formed on the second conductive type semiconductor layer of the first region and connected to the second conductive type semiconductor layer And the second electrode is formed on the second conductivity type semiconductor layer of the second region and may be connected to the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer. |
| priorityDate | 2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.