http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101829639-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2012-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101829639-B1 |
| titleOfInvention | A stable, concentratable, water soluble cellulose free chemical mechanical polishing composition |
| abstract | As initial components: water; Azole inhibitors; Alkali metal organic surfactants; Hydrophilic agents; A phosphorus-containing agent; Optionally, a non-saccharide water soluble polymer; Optionally, a water soluble acid compound of formula (I) wherein R is selected from hydrogen and a C 1-5 alkyl group, and x is 1 or 2; Optionally, a complexing agent; Optionally, an oxidizing agent; Optionally an organic solvent; There is provided a chemical mechanical polishing composition useful for the chemical mechanical polishing of a semiconductor wafer containing an interconnect metal, optionally including an abrasive. There is also provided a method of manufacturing a chemical mechanical polishing composition of the present invention and a chemical mechanical polishing of the substrate, comprising the steps of: providing a substrate which is a semiconductor wafer having a copper interconnect; Providing a chemical mechanical polishing composition of the present invention; Providing a chemical mechanical polishing pad; Generating dynamic contact with a down force of 0.69 to 34.5 kPa at the interface between the chemical mechanical polishing pad and the substrate; And dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; Wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of from 2 to 6 by adding at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210053082-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102570805-B1 |
| priorityDate | 2011-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 167.