http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101828131-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-147 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2015-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101828131-B1 |
| titleOfInvention | Resistance change memory device including organic-inorganic hybrid perovskite as resistance change layer and method for fabricating the same |
| abstract | A resistance change memory element and a method of manufacturing the same are provided. The resistance change memory element has a first electrode and a second electrode. And a resistance-variable layer having an organic metal halide having a perovskite crystal structure and disposed between the first electrode and the second electrode. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11283019-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200073165-A |
| priorityDate | 2015-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.