http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101822831-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2015-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101822831-B1 |
| titleOfInvention | Selective metal/metal oxide etch process |
| abstract | The present invention provides a method comprising: providing a substrate comprising a layer of an oxide semiconductor and a layer comprising molybdenum or titanium on the layer of the oxide semiconductor; After applying a photoresist layer to the layer comprising molybdenum or titanium and patterning and developing the photoresist layer to form an exposed portion of the layer comprising molybdenum or titanium, ; Providing a composition comprising ammonia or ammonium hydroxide, quaternary ammonium hydroxide, and peroxide; And applying the composition to the exposed portion for a time sufficient to etch and remove the exposed portion of the layer comprising molybdenum or titanium, Or selectively removing molybdenum or titanium, compared to an oxide semiconductor film, comprising selectively removing titanium or molybdenum or titanium. |
| priorityDate | 2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.