Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2018-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-101821672-B1 |
titleOfInvention |
Non-planar gate all-around device and method of fabrication thereof |
abstract |
A non-planar gate allround device and its fabrication method are described. In one embodiment, the apparatus comprises a substrate having an upper surface with a first lattice constant. Embedded epitaxial and drain regions are formed on the top surface of the substrate. The embedded epitaxial source and drain regions have a second lattice constant different from the first lattice constant. Channel nanowires with a third lattice constant are formed and coupled between the embedded epi source and drain regions. In one embodiment, the second lattice constant and the third lattice constant are different from the first lattice constant. The channel nanowires include the bottommost channel nanowire and bottom gate isolation is formed below the bottommost channel nanowire on the top surface of the substrate. A gate dielectric layer is formed on each and every channel nanowire. A gate electrode is formed on the gate dielectric layer and surrounds the channel nanowire. |
priorityDate |
2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |