| abstract |
Examples of the present application are in the exposure wavelength, the photo-substantially, before the SiO x N y C z is generated as a hard mask having optical characteristics matched to the resist: hydrogen into the cost referred to as H w compound Providing a method for forming a PVD silicon oxide or a silicon-rich oxide, or a combination of PVD SiN or silicon-rich SiN, or SiC or silicon-rich SiC, or a preceding one, including deformation comprising controlled doping, Here, w, x, y, and z may vary in concentration from 0% to 100%. Thus, an optically planarized hard mask for the photo-resist is produced. This allows multiple sequences of lithography and etchings in the hard mask, while the photo-resist essentially remains without optical topography or reflectivity variations. |