http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101811967-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate | 2013-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101811967-B1 |
| titleOfInvention | An Additive for Reducing Voids after Annealing of Copper Plating with TSV |
| abstract | The present invention provides an additive for void reduction after annealing of copper plating using TSV. Wherein the additive comprises 0.05 wt% to 1 wt% of at least one quaternized polyethyleneimine and derivatives thereof having different molecular weights, and 1 wt% to 10 wt% of polyethylene glycol having an average molecular weight of 200-20000 . The additive is used in combination with an electroplating solution of a copper methyl sulfonate system. The electroplating solution of the copper methyl sulfonate system contains 1-5 ml / L of the additive in volume ratio. The electroplating solution of the copper methyl sulfonate system comprises 50-110 g / L of copper ion, 5-50 g / L of methane sulfonic acid and 20-80 mg / L of chloride ion in a mass ratio by volume. The electroplating solution also contains 0.5-5 ml / L of accelerator, 5-20 mL of inhibitor and 5-10 ml / L of leveling agent in volume ratio. The porosity reducing additive after annealing of copper plating using the TSV of the present invention can solve the problem of micro-voids between crystal grain boundaries after high temperature annealing of copper plating. |
| priorityDate | 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.