http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101810699-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-383 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101810699-B1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | And to manufacture a semiconductor device having high reliability including a thin film transistor having stable electric characteristics. (For dehydration or dehydrogenation) for increasing the purity of the oxide semiconductor film and reducing impurities such as water, in a method of manufacturing a semiconductor device including a thin film transistor using an oxide semiconductor film as a semiconductor layer including a channel formation region, . Thereafter, slow cooling is performed in an oxygen atmosphere. In the heat treatment, impurities such as water present in the oxide semiconductor film as well as impurities such as water present in the gate insulating layer are reduced and moisture in the interface between the oxide semiconductor film and the films provided in contact with the top and bottom of the oxide semiconductor film And the like. |
| priorityDate | 2009-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.