http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101808527-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2011-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101808527-B1 |
| titleOfInvention | Manufacturing method of thin film transistor |
| abstract | The present invention provides a method of manufacturing a thin film transistor capable of reducing an off current, comprising the steps of: forming a gate electrode on a substrate using a first mask; Forming a gate insulating film covering the gate electrode; A source electrode and a drain electrode arranged to face each other on both sides of the semiconductor layer with the channel region therebetween, the source electrode and the drain electrode overlapping at least part of the gate electrode using the second mask, Forming on the insulating film; Plasma processing the channel region of the semiconductor layer exposed between the source electrode and the drain electrode using a gas including a Group III element or a Group 5 element; And forming a protective film covering the source and drain electrodes and the plasma-treated channel region. |
| priorityDate | 2011-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.