| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1036 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2009-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101803221-B1 |
| titleOfInvention |
Self-aligned barrier layers for interconnects |
| abstract |
An interconnect structure for an integrated circuit includes a layer of manganese silicide and a layer of silicon nitride manganese completely surrounding the copper wire in the integrated circuit, and a method of manufacturing the same. The manganese silicide forms a barrier to copper diffusion from the wiring, thereby preventing the insulator from prematurely collapsing and preventing the transistor from being deteriorated by copper. Manganese silicate and silicon nitride manganese also promote strong adhesion between the copper and the insulator, thus preserving the mechanical integrity of the device during manufacture and use. Strong adhesion at the interface between copper-manganese silicide and silicon nitride manganese also prevents breakdown due to electron transfer of copper during use of the device. The manganese containing shell also protects copper from oxygen or water corrosion from its surroundings. |
| priorityDate |
2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |