| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C211-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C211-65 |
| filingDate |
2008-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101797880-B1 |
| titleOfInvention |
Cobalt nitride layers for copper interconnects and methods for forming them |
| abstract |
The wiring structure for an integrated circuit according to the present invention incorporates a cobalt nitride layer which promotes crystal nucleation, growth and adhesion of copper wires. Cobalt nitride can be deposited on a refractory metal nitride layer or carbide layer, such as tungsten nitride or tantalum nitride, which acts as a diffusion barrier for copper and also increases the adhesion between cobalt nitride and bottom insulator. Cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on cobalt nitride exhibit high electrical conductivity and can be used as seed layers for electrochemical deposition of copper conductors for microelectronics. |
| priorityDate |
2007-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |