| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc5fdf0f2197acd126d78225df71a935 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_206265f37cc7afbde7292ff8ce7eb91a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc0e7788e417e9e9b72e80909da25105 |
| publicationDate |
2017-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101795783-B1 |
| titleOfInvention |
metal-graphene heterojunction metal interconnects, its forming method, and semiconductor device including the same |
| abstract |
The present invention relates to a metal-graphene heterojunction metal interconnection, a method of forming the same, and a semiconductor device including the same, the method comprising: (A) depositing a carbon source on an upper surface of a substrate to form a carbon source layer; (B) depositing a metal catalyst on the carbon source layer to form a metal catalyst layer; And (C) heat treating the substrate including the carbon source layer and the metal catalyst layer. Therefore, since the graphene can be formed only by one heat treatment regardless of the number of layers, the manufacturing time and manufacturing cost of the metal wiring can be reduced And the metal wiring is not damaged by the heat treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112439418-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112439418-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102024458-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190058231-A |
| priorityDate |
2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |