http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101792429-B1

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filingDate 2016-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a5cf1eb8b871c99f76379614ce2997f
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publicationDate 2017-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101792429-B1
titleOfInvention Three terminal resistance-change memory transistor using oxide semiconductor and method for manufacturing the same
abstract The present invention discloses a resistance variable memory transistor and a method of manufacturing the same. The resistance change type memory transistor according to an embodiment of the present invention includes a first gate electrode, an oxide semiconductor layer, a source / drain electrode, a gate insulating film, a contact hole, a source / drain electrode pad, And the oxide semiconductor layer simultaneously implements a resistance change type memory function and a channel function.
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