http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101791685-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2008-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101791685-B1 |
| titleOfInvention | High Dose Implantation Strip (HDIS) In H2 Base Chemistry |
| abstract | A plasma is generated using a hydrogen element, a weak oxidizing agent, and a fluorine-containing gas. An inert gas is injected into the plasma downstream of the plasma source and upstream of the showerhead, which directs the gas mixture into the reaction chamber, where the mixture reacts with the high dose implant photoresist. The treatment removes both the sheath and the layer of the layer of the resist at high strip speeds, which allows the workpiece surface to remove residues with little silicon loss. |
| priorityDate | 2008-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.