http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101770890-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16 |
| filingDate | 2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101770890-B1 |
| titleOfInvention | Self-reference-adjusted switching detecting method and apparatus in spin-transfer torque magnetic randoom access memory |
| abstract | A switching sensing method and apparatus using self-referencing in a magnetoresistive memory are disclosed. A switching sensing method in a magnetoresistive memory according to an embodiment of the present invention includes: generating a reference voltage based on a data voltage of a MTJ (Magnetic Tunnel Junction) cell input to a comparator; Comparing the generated reference voltage with the data voltage in the comparator and outputting a comparison result; And converting the output of the comparison result into logical data using a buffer and detecting switching of the MTJ cell based on the converted logical data. |
| priorityDate | 2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426135032 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7156993 |
Total number of triples: 14.