| abstract |
The present invention relates to a FET type device having a membrane structure and a method of manufacturing the same. More particularly, the present invention relates to a FET type device having a membrane structure and including a source electrode and a drain electrode separately arranged in a source region and a drain region, A membrane layer formed to cover the vacuum gap so that a vacuum gap is formed between the source electrode and the drain electrode; And a gate electrode configured to cover at least a partial area of the front surface of the membrane layer corresponding to the channel region. The FET type device is configured with a membrane structure in which a vacuum gap is formed on the channel region, thereby improving detection accuracy and reliability, A sensor, a gas sensor, an ultrasonic transducer, a tactile sensor, a fingerprint sensor, a flash memory, and a biosensor. |