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filingDate 2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101766190-B1
titleOfInvention Methods of etching films comprising transition metals
abstract Methods are provided for etching films comprising transition metals. Particular methods include activating a substrate surface comprising at least one transition metal wherein activation of the substrate surface comprises exposing the substrate surface to a thermal, plasma, oxidizing environment, or halide transfer agent to provide an activated substrate surface ; Exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of a transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising at least two of a Co layer, a Cu layer, and a Ni layer.
priorityDate 2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 45.