http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101763048-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0751 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
| filingDate | 2014-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101763048-B1 |
| titleOfInvention | Silicon-containing antireflective coatings including non-polymeric silsesquioxanes |
| abstract | Embodiments include a silicon-containing antireflective material, which includes a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photo-acid generator. The silicon-containing base polymer may include a chromophore component, a transparent component, and SiO x May include reaction sites on the background, where x ranges from about 1 to about 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes, which include acid labile side groups linked to hydrophilic groups (acid labile side groups linked to hydrophilic groups. Exemplary acid labile side groups include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals, and ketals. . Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments may further include lithographic structures comprising an organic anti-reflective layer, a silicon-containing anti-reflective layer as described above on the organic anti-reflective layer, and a photoresist layer on top of the silicon- . Embodiments further include a method of forming a lithographic structure using the silicon-containing antireflective layer described above. |
| priorityDate | 2013-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 88.