| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2015-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101761001-B1 |
| titleOfInvention |
Semiconductor device including fin structures and manufacturing method thereof |
| abstract |
A method for manufacturing a semiconductor device includes forming a fin structure having a top surface and a side surface. A mask layer is disposed over the top surface. A doping support layer is formed to cover a portion of the fin structure. A first impurity is introduced into the first region of the fin structure covered by the doping support layer by implanting a first impurity into the doping support layer such that the implanted first impurity is introduced into the first region of the fin structure through the side surface. |
| priorityDate |
2015-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |