| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-354
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3408 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101760846-B1 |
| titleOfInvention |
Methods for depositing metal in high aspect ratio features |
| abstract |
Methods of depositing metal on high aspect ratio features formed on a substrate are provided herein. In some embodiments, the method includes applying a first RF power at a VHF frequency to a target comprising a metal disposed over the substrate to form a plasma; DC power to the target to direct the plasma toward the target; Maintaining a pressure in the PVD chamber sufficient to ionize a dominant portion of the metal atoms while sputtering the metal atoms from the target using a plasma; Depositing a first plurality of metal atoms on a bottom surface of the opening and on a first side of the substrate; Applying a second RF power to redistribute at least some of the first plurality of metal atoms from a bottom surface to a lower portion of the sidewalls of the aperture; And depositing a second plurality of metal atoms on top of the sidewalls by reducing the amount of ionized metal atoms in the PVD chamber, wherein the first and second plurality of metal atoms are substantially A first layer deposited on all sides is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022015615-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728259-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11652039-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11469167-B2 |
| priorityDate |
2010-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |