| abstract |
Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method of manufacturing an integrated circuit is disclosed. In the first step, an active circuit is formed in the active layer of the SOI wafer. In the second step, the substrate material is removed from the substrate layer disposed on the back side of the SOI wafer. In a third step, an insulator material is removed from the backside of the SOI wafer to form an insulated insulator region. In a fourth step, a heat dissipation layer is deposited on the exposed insulator region. The heat-radiating layer is thermally conductive and electrically insulating. |