http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101752901-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02032 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2010-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101752901-B1 |
| titleOfInvention | METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING REPROCESSED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOl SUBSTRATE |
| abstract | It is an object of the present invention to provide a method suitable for regeneration of a semiconductor substrate. In one aspect of the disclosed invention, one object of the present invention is to fabricate a regenerated semiconductor substrate by using a method suitable for regeneration of a semiconductor substrate. It is another object of the disclosed invention to manufacture an SOI substrate using a regenerated semiconductor substrate. An etching process in which the insulating layer is removed with respect to the semiconductor substrate in which the convex portions including the damaged semiconductor region and the insulating layer are present in the edge portion, a material for oxidizing the semiconductor material constituting the semiconductor substrate, The damaged semiconductor region is selectively removed with respect to the intact semiconductor region by using a mixed solution including a material that dissolves and a material that controls a rate of oxidation of the semiconductor material and a rate of dissolution of the oxidized semiconductor material The semiconductor substrate is regenerated. |
| priorityDate | 2009-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.