| abstract |
Various on-chip capacitors and their fabrication methods are disclosed. In one embodiment, a method of fabricating a capacitor is provided, the method including forming a first conductor structure on a semiconductor chip, and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. The under bump metallization structure overlaps with at least a portion of the first conductor structure to provide a capacitor. |