abstract |
An object of the present invention is to drive a semiconductor device at high speed and improve the reliability of the semiconductor device. In a method for manufacturing a semiconductor device, a gate electrode is formed on a substrate having an insulating property, a gate insulating film is formed on the gate electrode, an oxide semiconductor film is formed on the gate insulating film, and the gate insulating film is formed by a film forming process . Therefore, the number of unbound bonds in the gate insulating film is reduced, and the quality of the interface between the gate insulating film and the oxide semiconductor is improved. |