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filingDate 2010-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101747158-B1
titleOfInvention Method for manufacturing semiconductor device
abstract An object of the present invention is to drive a semiconductor device at high speed and improve the reliability of the semiconductor device. In a method for manufacturing a semiconductor device, a gate electrode is formed on a substrate having an insulating property, a gate insulating film is formed on the gate electrode, an oxide semiconductor film is formed on the gate insulating film, and the gate insulating film is formed by a film forming process . Therefore, the number of unbound bonds in the gate insulating film is reduced, and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.
priorityDate 2009-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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