abstract |
An embodiment of the present invention is a method of manufacturing a semiconductor device, comprising: preparing a mixture (step 1) of a mixture of titanium oxide, tantalum oxide, molybdenum oxide, niobium oxide, tungsten oxide, zirconium oxide and carbon; And a step of heat treating the mixture in a nitrogen atmosphere and a heat treatment in a nitrogen atmosphere (step 2). The present invention also provides a method for producing a composite titanium carbonitride in a single phase. |