http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101743132-B1

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filingDate 2016-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57ff4fcb3ff566d478ebf58d8280e20f
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publicationDate 2017-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101743132-B1
titleOfInvention Manufacturing method of titanium carbonitride composite and titanium carbonitride composite manufactured thereby
abstract An embodiment of the present invention is a method of manufacturing a semiconductor device, comprising: preparing a mixture (step 1) of a mixture of titanium oxide, tantalum oxide, molybdenum oxide, niobium oxide, tungsten oxide, zirconium oxide and carbon; And a step of heat treating the mixture in a nitrogen atmosphere and a heat treatment in a nitrogen atmosphere (step 2). The present invention also provides a method for producing a composite titanium carbonitride in a single phase.
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