| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101733289-B1 |
| titleOfInvention |
ETCHING SOLUTION FOR SiLICON NITRIDE LAYER |
| abstract |
The present invention relates to a silicon nitride film etching solution, and more particularly, to an etching solution having a higher etching selectivity to a silicon nitride film than a silicon oxide film in wet etching in a semiconductor manufacturing process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10689572-B2 |
| priorityDate |
2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |