| abstract |
There is provided an interconnect structure of an integrated circuit for copper wiring in an integrated circuit and a method of manufacturing the same. The Mn, Cr, or V containing layer forms a barrier to copper diffusing from the wiring, thereby protecting the insulator from cracks earlier than normal and protecting the transistor from deterioration by copper. In addition, the Mn, Cr, or V containing layer promotes strong adhesion between the copper and the insulator, thereby protecting the copper from electron migration during use of the device and protecting the copper from corrosion by surrounding oxygen or water, Maintains the mechanical integrity of the device during manufacture and use. In forming such an integrated circuit, one embodiment of the present invention involves selectively depositing Mn, Cr, V, or Co on the copper surface while reducing or even inhibiting the deposition of Mn, Cr, V, or Co on the surface of the insulator ≪ / RTI > Deposition by a catalyst of copper using Mn, Cr or V containing precursors and iodine or bromine containing precursors is also provided. |