Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-0834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
filingDate |
2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2017-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-101728951-B1 |
titleOfInvention |
Etching solution for silicon nitride layer |
abstract |
The present invention relates to a silicon nitride film etching solution, and more particularly, to an etching solution having a higher etching selectivity to a silicon nitride film than a silicon oxide film in wet etching in a semiconductor manufacturing process. |
priorityDate |
2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |