http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101722285-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101722285-B1 |
| titleOfInvention | Method for producing thick film photoresist pattern |
| abstract | A method of manufacturing a thick film photoresist pattern suppressing bubbles is provided. A step of laminating a thick film photoresist layer made of a chemically amplified positive type photoresist composition for a thick film on a support; an exposure step of irradiating the thick film photoresist layer with an actinic ray or radiation; And a developing step of developing the thick film photoresist layer to obtain a thick film photoresist pattern, wherein the chemical amplification type positive type photoresist composition for thick film comprises an acid generator (A) which generates an acid upon irradiation with an actinic ray or radiation and (B) having a solubility in an alkali by the action of an acid and an organic solvent (S), wherein the organic solvent (S) has a boiling point of 150 DEG C or higher at atmospheric pressure, Of the total organic solvent is contained in an amount of 40 mass% or more. |
| priorityDate | 2011-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 389.