http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101720425-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1307 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0508 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2015-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101720425-B1 |
| titleOfInvention | Method for forming semiconducting polymer thin films using spin coating techniques |
| abstract | More particularly, the present invention relates to a method of forming a semiconductor polymer thin film by spin coating, and more particularly, to a method of forming a thin film of a semiconductor polymer by spin coating a semiconductor polymer (for example, P3HT) Sec.) To induce a slow growth process associated with the solidification of the semiconductor polymer in the thin film, thereby obtaining a uniform and highly crystalline thin film, and a semiconductor polymer thin film capable of greatly improving the electrical performance of the device employing the thin film A semiconductor polymer thin film formed by the method, and a field effect transistor (FETs) including the same. |
| priorityDate | 2015-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.