| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1443
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10325 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2015-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101712003-B1 |
| titleOfInvention |
2-Dimensional laminated composite structured bistable non-volatile memory device and methods of manufacturing the same |
| abstract |
A lower electrode formed on a substrate; A lower insulating layer, an active layer and an upper insulating layer sequentially formed on the lower electrode; And an upper electrode formed on the upper insulating layer, wherein the active layer comprises molybdenum disulfide (MoS 2 ) grown by chemical vapor deposition, and the lower and upper insulating layers are formed by hexagonal nitridation grown by chemical vapor deposition A bistable non-volatile memory device is provided which comprises boron (h-BN). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101990050-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102486162-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110429026-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107464876-A |
| priorityDate |
2015-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |