| abstract |
The present invention is directed to a semiconductor device comprising a first insulating substrate 28A having at least one first conductive layer 29A thereon and at least one second insulating substrate 28B having at least one second conductive layer 29B thereon, (28A, 28B) such that an interface region is formed between the first and second substrates (28A, 28B), the interface region comprising at least one first conductive layer (29A) Comprising an electrically contacting area at least partially aligned with at least one second conductive layer (29B), and a substrate melting area in which the insulating substrates (28A, 28B) are directly opposed to each other, Concentrating the plurality of sequential focused laser pulses in the interface region of the substrate (28A, 28B) through one of the substrates (28A, 28B), wherein the pulse duration, pulse frequency, ) Moving the laser source and the substrate at a predetermined speed and path relative to each other so as to form a structural strain zone in the interface region, Wherein the structural strain zone overlaps the electrical contact zone and the substrate melt zone. The present invention provides a convenient method of producing electrical contacts and well-sealed seams, for example, in multifunctional electronic devices. |