| abstract |
The present invention provides a semiconductor bonding wire having copper or copper alloy as a core wire, which can ensure good wedge bonding even in a palladium-plated lead frame and is excellent in oxidation resistance. A coating layer containing palladium having a thickness of 10 to 200 nm on the surface of the core wire and a coating layer containing a noble metal and palladium having a thickness of 1 to 80 nm on the surface of the coating layer, Wherein the noble metal is silver or gold, and the concentration of the noble metal in the alloy layer is 10 vol% or more and 75 vol% or less. |