| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d825814c2847d297de844b4e7c60de4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2015-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3f07cd1a8a295b442b2e6457d105b59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eab825f84e9403a9b04abb72c4f4726
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e33c5bb4a9bdb94661cd7cd86bcc421b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a651dd7430a8c70a39b02850be01ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ba36c5d15c0b5c6fa69fb41022d8515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a8ec0ad59c44ff94dccd13a011384ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78c6dd48103a6f981a55058c7fc307da |
| publicationDate |
2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101704693-B1 |
| titleOfInvention |
Pattern on the flexible substrate using for intense pulsed photo-sintering and method for forming the same |
| abstract |
The present invention provides a method of manufacturing a semiconductor device, comprising the steps of: (a) applying a solution containing a nano-metal powder or a semiconductor powder onto a substrate to form a coating layer; (b) (B) forming a pattern on the substrate by placing a through-formed mask and irradiating an upper surface of the mask with an intense pulsed light (IPL) to form a pattern on the substrate; and (c) And removing the coating layer having low adhesiveness without being irradiated with light by the mask. A method of forming a pattern using a light sintering method according to the present invention includes coating a solution containing metal powder or semiconductor powder having various shapes of nano size on a substrate to coat the same and irradiating white light (Intense Pulsed Light, IPL) , It is possible to easily form a conductive pattern or a semiconductor pattern which can be photo-sintered in a short period of time to prevent oxidation of metal and exhibit excellent electrical conductivity. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102210960-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180116534-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190016278-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102218890-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180128136-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180104814-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102002839-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210004220-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102026181-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102002837-B1 |
| priorityDate |
2015-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |