http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101703696-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02027 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate | 2012-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101703696-B1 |
| titleOfInvention | Method for manufacturing silicon substrate and silicon substrate |
| abstract | A silicon substrate cut from a silicon single crystal ingot grown by the Czochralski method is subjected to rapid thermal annealing at a temperature lower than the melting point of silicon for 1 to 60 seconds by using a rapid heating and rapid cooling apparatus at a temperature higher than 1300 캜 The cooling step is performed at a cooling rate of 5 to 150 DEG C / sec to a temperature in the range of 600 to 800 DEG C, and then the cooling time X seconds and the cooling rate Y DEG C / sec are set to X < 100 And Y &le; 10 in the case of X > = 100. Thus, there is provided a silicon substrate manufacturing method and a silicon substrate which are free of RIE defects in the surface layer and have a sufficiently long lifetime. |
| priorityDate | 2011-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.