http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101703417-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1306 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11585 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
filingDate | 2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101703417-B1 |
titleOfInvention | Transistor using PVDF film bonded with azobenzene and manufacturing method thereof |
abstract | The present invention relates to a transistor using an azobenzene-bonded PVDF film and a manufacturing method thereof. An MFMIS type field effect transistor according to an embodiment of the present invention includes a substrate on which a source region and a drain region are formed and a channel region is formed therebetween, an insulating layer formed on the channel region, a lower electrode layer formed on the insulating layer, A ferroelectric layer formed on the electrode layer and an upper electrode layer formed on the ferroelectric layer, wherein the lower electrode layer is set as a data electrode and the upper electrode layer is set as a ground electrode, and the ferroelectric layer has a polarization value, Drain is set, and the ferroelectric layer may be a PVDF-azobenzene polymer film to which azobenzene and PVDF are bonded. |
priorityDate | 2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 90.