http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101699078-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101699078-B1 |
| titleOfInvention | Positive resist compositions and patterning process |
| abstract | The present invention relates to a resin composition comprising a resin component (A) soluble in an alkali developer by the action of an acid and a compound (B) generating an acid in response to an actinic ray or radiation, wherein the resin component (A) ), Which is a polymer compound having a repeating unit represented by the following formula (1). (Wherein R 1 is each independently a hydrogen atom, a methyl group or a trifluoromethyl group, R 2 is an acid labile group, R 3 is a hydrogen atom or CO 2 CH 3 , X is O, S, CH 2 or CH 2 CH 2 , and a and b each represent an abundance ratio of each repeating unit, and are each 0.01 or more and less than 1.) The resist material of the present invention can provide a very small pattern with line width roughness with high mask fidelity in microfabrication techniques, particularly ArF lithography, and is very useful for fine microfabrication. |
| priorityDate | 2009-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.