http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101695054-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D333-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D333-06 |
| filingDate | 2013-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101695054-B1 |
| titleOfInvention | Sulfonium salt, resist composition and patterning process |
| abstract | [PROBLEMS] To provide a resist pattern which is excellent in resolution, especially rectangular shape in pattern shape, and has good roughness and a good pattern in photolithography using a high energy beam as a light source, And a sulfonium salt thereof, and a method for forming a pattern using the resist material. [Solution] A sulfonium salt represented by the following general formula (1a). (Wherein R and R 0 each independently represents a hydrogen atom or a linear, branched or cyclic monovalent hydrocarbon group of 1 to 30 carbon atoms, which may be substituted by a hetero atom and may have a hetero atom) |
| priorityDate | 2013-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 292.