http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101687812-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1443 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11507 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101687812-B1 |
| titleOfInvention | Memory device having non-volatile resistive switching characteristics and manufacturing method thereof |
| abstract | The present invention relates to a memory device having nonvolatile resistance switching characteristics and a method of manufacturing the same, and more particularly, to a memory device having a substrate; A lower electrode formed on the substrate; An organic thin film layer having a perovskite structure formed on the lower electrode; And an upper electrode formed on the organic thin film layer. The present invention also relates to a method of manufacturing the same. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200076319-A |
| priorityDate | 2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 92.