http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101685100-B1

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filingDate 2015-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101685100-B1
titleOfInvention Formation method of hexagonal boron nitride thick film on a substrate and hexagonal boron nitride thick film laminates thereby
abstract The present invention relates to a method for producing a multi-layer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method for manufacturing a hexagonal boron nitride (h-BN) thick film comprising: (a) (b) an h-BN precursor supplying step of supplying the heated first substrate with the h-BN precursor; (c) a precursor dissolving step of dissolving the supplied h-BN precursor in a first substrate; and (d) a substrate cooling step of cooling the first substrate in which the h-BN precursor is dissolved, BN thick film and a laminated body including a multilayered h-BN thick film formed according to the above-described method and a substrate having a laminated structure with the h-BN thick film.
priorityDate 2015-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 40.