http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101675388-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
filingDate 2010-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101675388-B1
titleOfInvention Fabricating method of semiconductor device
abstract The present invention relates to a method of manufacturing a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes: providing a semiconductor substrate in which a first semiconductor element region and a second semiconductor element region are defined; forming a first gate structure in the first semiconductor element region; Forming a second gate structure in the second semiconductor device region, forming a first trench on either side of the first gate structure, forming a second trench on either side of the second gate structure, Wherein the cross-sectional shape of the first and second trenches cut in a direction parallel to the vertical direction of the first and second gate structures includes forming a first semiconductor pattern and a second semiconductor pattern in the second trench, And have different shapes.
priorityDate 2010-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448259779
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Total number of triples: 26.