http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101674679-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
filingDate 2009-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101674679-B1
titleOfInvention Manufacturing method of an array substrate for liquid crystal display
abstract The present invention provides a method of manufacturing a semiconductor device, comprising: a) forming a gate wiring on a substrate; b) forming a gate insulating layer on the substrate including the gate wiring; c) forming a semiconductor layer on the gate insulating layer; d) forming source and drain electrodes on the semiconductor layer; And forming a pixel electrode connected to the drain electrode, wherein the step a) includes the steps of: forming a copper-based metal film on the substrate and forming the copper-based metal film on the etchant composition Wherein the step d) includes forming a copper-based metal film on the semiconductor layer and etching the copper-based metal film with the etchant composition to form source and drain electrodes, Wherein the etchant composition comprises 0.1 to 25% by weight of A) hydrogen peroxide (H 2 O 2 ), 1 to 20% by weight of a sulfate and 0.01 to 5.0% by weight of a fluorine compound, and D) Of water in the liquid crystal display device.n n n Copper film, liquid crystal display, gate, source, drain, hydrogen peroxide, etchant
priorityDate 2009-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 49.