http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101673261-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101673261-B1 |
| titleOfInvention | P-type silicon carbide single crystal and growing method for the same |
| abstract | A P-type silicon carbide single crystal and a growing method thereof are disclosed. One embodiment of the present invention is a method for manufacturing a semiconductor device, comprising: preparing a mixed powder of Al 3 C 4 powder and SiC powder; Charging the mixed powder into the bottom of the crucible; Mounting a SiC seed crystal on top of the crucible; And heating the crucible equipped with the SiC seed crystal to a growth temperature and then growing the single crystal by sublimating the mixed powder charged in the crucible, wherein the crucible equipped with the SiC seed crystal is heated to a growth temperature And growing a single crystal by sublimation of mixed powder charged in the crucible, wherein N 2 A method for growing a P-type silicon carbide single crystal, which stabilizes a crystal polymorphism by supplying a gas. |
| priorityDate | 2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.