http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101672796-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-10715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J23-72 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-08 |
| filingDate | 2009-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101672796-B1 |
| titleOfInvention | Method for producing high purity trichlorosilane for poly-silicon using chlorine gas or hydrogen chloride |
| abstract | The present invention relates to a process for producing high purity trichlorosilane (TCS, SiHCl 3 ), and more particularly to a process for the production of silicon tetrachloride (STC, SiCl 4 ) in a reactor such as a fluidized bed reactor or a fixed bed reactor, , Metallic silicon (MG Si), hydrogen (H 2 ) and chlorine (Cl 2 ) or hydrogen chloride (HCl) to produce trichlorosilane. The method for producing trichlorosilane of the present invention can utilize silicon tetrachloride and hydrogen, which are byproducts generated in the course of silicon precipitation, and can obtain a chlorination effect caused by additional chlorine, The effect of increasing the conversion rate of trichlorosilane is higher than that occurring. According to the present invention, high purity trichlorosilane as a raw material of polycrystalline silicon can be produced economically and effectively.n n n n Metallic silicon, silicon tetrachloride, hydrogen, chlorine, hydrogen chloride, trichlorosilane, polycrystalline silicon |
| priorityDate | 2009-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.