http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101665954-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101665954-B1 |
| titleOfInvention | Semiconductor device and method for manufacturing the same |
| abstract | An object of the present invention is to improve the field effect mobility in a thin film transistor using an oxide semiconductor. Another problem is to stabilize the electrical characteristics of the thin film transistor.n n n In the thin film transistor using the oxide semiconductor layer, the field effect mobility of the thin film transistor can be improved by forming a semiconductor layer or a conductive layer having a conductivity higher than that of the oxide semiconductor layer on the oxide semiconductor layer. Further, by forming a semiconductor layer or a conductive layer having a conductivity higher than that of the oxide semiconductor layer between the oxide semiconductor layer and the protective insulating layer of the thin film transistor, the composition of the oxide semiconductor layer and deterioration of the film quality are prevented, Can be stabilized.n n n n A semiconductor device, a thin film transistor, an oxide semiconductor layer, a protective insulating layer, a carrier concentration |
| priorityDate | 2008-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.