http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101663140-B1

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filingDate 2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6770074622708b80b513b1d7370539a3
publicationDate 2016-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101663140-B1
titleOfInvention Highly transparent visible-light photodetector and manufacturing method to fabricate highly transparent visible-light photodetector using quantum dots
abstract The present invention relates to a highly transparent visible-light sensor for a smart electronic device and a forming method thereof. The highly transparent visible-light sensor according to an embodiment includes a transparent semiconductor which has a band gap which is more than a first threshold value, and transmits visible light with a predetermined rate or more, and quantum dots which are formed on one side of the transparent semiconductor and have band gaps which are less than a second threshold value. The quantum dots absorb the visible light and convert the visible light into an electronic signal. So, a material of the quantum dots can be used as a light absorption material.
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