http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101661295-B1

Outgoing Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3418
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-34
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filingDate 2010-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101661295-B1
titleOfInvention Selective memory cell program and erase
abstract Techniques for programming a memory array to achieve high program / erase cycle endurance are disclosed herein. In some aspects, the selected word lines WL are programmed and the other WLs remain unprogrammed. As an example, only the even word lines are programmed and the odd numbered WLs remain unprogrammed. After programming all the even word lines, the data block is programmed with the new data and the block is erased. Only odd word lines are then programmed. Prior to erase, data is transferred to a block that stores a plurality of bits per memory cell. In an aspect, the data is programmed in a checkerboard pattern in which some memory cells are programmed and other memory cells are left unprogrammed. Thereafter, after erasing the data, the remaining cells are programmed and the portion of the checkerboard pattern that was not previously programmed is programmed.
priorityDate 2009-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327157

Total number of triples: 26.