| abstract |
An organic germanium amine compound represented by the following formula (1) and a film forming method using the compound as a precursor are disclosed: ≪ Formula 1 > , In Formula 1, L 1 , L 2 , L 3 and L 4 each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 12 carbon atoms, an alkylamine group having 1 to 10 carbon atoms, An arylamine group having 1 to 12 carbon atoms, an aralkylamine group having 7 to 13 carbon atoms, a cyclic amine group having 3 to 10 carbon atoms, a heterocyclic amine group having 3 to 10 carbon atoms, or an alkylsilylamine group having 2 to 10 carbon atoms. When the compound according to the present invention is used as a precursor, a germanium oxide film, a germanium nitride film, a metal germanium oxide film, or a metal germanium nitride film can be effectively deposited. |